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hexfet power mosfet notes through are on page 9 3.3mm x 3.3mm pqfn 3 21 8 7 6 5 4 d d d d s s s g applications ? battery operated dc motor inverter mosfet ? secondary side synchronous rectification mosfet features and benefits absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 25c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 100c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 2640 160 12 2021 40 -55 to + 150 2.7 0.022 37 features benefits low r dson (<2.5m ) lower conduction losses low thermal resistance to pcb (<3.4c/w) enable better thermal dissipation low profile (<1.0mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability

! "# note form quantity IRLHM620trpbf pqfn 3.3mm x 3.3mm tape and reel 4000 IRLHM620tr2pbf pqfn 3.3mm x 3.3mm tape and reel 400 eol notice #259 orderable part number package type standard pack v ds 20 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 2.5 m r ds(on) max (@v gs = 2.5v) 3.5 m q g (typical) 52 nc i d (@t c(bottom) = 25c) 40 a downloaded from: http:///

! "# s d g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 3.4 r jc (top) junction-to-case CCC 37 c/w r ja junction-to-ambient CCC 46 r ja (<10s) junction-to-ambient CCC 31 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 5.4 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 1.5 2.2 CCC 1.8 2.5 CCC 2.7 3.5 v gs(th) gate threshold voltage 0.5 0.8 1.1 v ? v gs(th) gate threshold voltage coefficient CCC -4.3 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 58 CCC CCC s q g total gate charge CCC 52 78 v ds = 10v q gs gate-to-source charge CCC 6.3 CCC q gd gate-to-drain charge CCC 25 CCC r g gate resistance CCC 2.6 CCC t d(on) turn-on delay time CCC 7.5 CCC t r rise time CCC 25 CCC t d(off) turn-off delay time CCC 57 CCC t f fall time CCC 37 CCC c is s input capacitance CCC 3620 CCC c os s output capacitance CCC 900 CCC c rss reverse transfer capacitance CCC 620 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.2 v t rr reverse recovery time CCC 41 62 ns q rr reverse recovery charge CCC 68 100 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v gs = 4.5v CCC v gs = 12v v gs = -12v CCC CCC 160 CCC CCC 40 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 20a conditions see fig.15 max. 120 20 ? = 1.0mhz t j = 25c, i f = 20a, v dd = 10v di/dt = 220a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. CCC r g =1.0 v ds = 10v, i d = 20a v ds = 16v, v gs = 0v, t j = 125c a i d = 20a (see fig.17 & 18) i d = 20a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v ds = v gs , i d = 50 a v gs = 2.5v, i d = 20a typ. m v dd = 10v, v gs = 4.5v v gs = 4.5v, i d = 20a downloaded from: http:///

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! "# fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.8v 1.5v bottom 1.3v 60 s pulse width tj = 25c 1.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.3v 60 s pulse width tj = 150c vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.8v 1.5v bottom 1.3v 0.5 1.0 1.5 2.0 2.5 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 60 s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 04 06 08 01 0 01 2 0 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v v ds = 4.0v i d = 20a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 4.5v downloaded from: http:///

! "# fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 90 100 i d , d r a i n c u r r e n t ( a ) limited by package 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc downloaded from: http:///

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! "# fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 1 2 3 4 5 6 7 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.8a 12a bottom 20a downloaded from: http:///

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for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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! " # $!$ pqfn 3.3x3.3 outline package details pqfn 3.3x3.3 outline part marking international rectifier logo part number marking code (per marking spec) assembly site code (per scop 200-002) date code lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pin 1 identifier

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! "# pqfn 3.3x3.3 outline tape and reel
! " # $!$ bo w p 1 aoko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape di mens i on des i gn to accommodate the component wi dth dimens ion des ign to accommodate the component lenght dimens ion des ign to accommodate the component thicknes s p i tch between s ucces s i ve cavi ty center s over al l wi dth of the car r i er t ape bo w p 1 aoko dime ns i on (mm) code mi n max dime ns ion (inch) mi n max 3.50 3.70 .138 .146 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 3.50 3.70 .138 .146 de s cript ion w 1 qty 4000 r eel di ameter 13 i nches downloaded from: http:///

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! "# qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.59mh, r g = 50 , i as = 20a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 40a by productiontest capability. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 3.3mm x 3.3mm qualification information ? moisture sensitivity level qualification level industrial ?? (per jede c jes d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (e ol notice #259). ? updated data sheet with the new ir corporate template. ? added rdson typical ="1.5m ", max = "2.2m " @v gs =10v,i d =20a on page 2. ? updated rdson typical from "2m " to "1.8m " @v gs =4.5v,i d =20a on page 2. ? updated package outline and tape and reel on page 7 & 8. 1/14/2014 5/29/2014 downloaded from: http:///

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